DEVICES

DEVICES
=======

Table of contents

1. Introduction
2. Linear Devices
 2.1 CAP - Linear capacitor
 2.2 IND - Linear inductor
 2.3 RES - Linear resistor
 2.4 R, L, C behavioral (non-linear) devices
3. Distributed Elements
 3.1 CPL - Simple Coupled Multiconductor Lines (Kspice)
 3.2 LTRA - Lossy Transmission line
 3.3 TRA  - Transmission line
 3.4 TXL - Simple Lossy Transmission Line (Kspice)
 3.5 URC - Uniform distributed RC line
4. Voltage and current sources
 4.1 ASRC - Arbitrary Source
 4.2 CCCS - Current Controlled Current Source
 4.3 CCVS - Current Controlled Voltage Source
 4.4 ISRC - Independent Current Source
 4.5 VCCS - Voltage Controlled Current Source
 4.6 VCVS - Voltage Controlled Voltage Source
 4.7 VSRC - Independent Voltage Source
5. Switches
 5.1 CSW - Current controlled switch
 5.2 SW - Voltage controlled switch
6. Diodes
 6.1 DIO - Junction Diode
7. Bipolar devices
 7.1 BJT - Bipolar Junction Transistor
 7.2 VBIC - Bipolar Junction Transistor
 7.3 HICUM2 - Bipolar High Speed Junction Transistor
8. FET devices
 8.1 JFET - Junction Field Effect transistor
9. HFET Devices
 9.1 HFET1 - Heterostructure Field Effect Transistor Level 1
 9.2 HFET2 - Heterostructure Field Effect Transistor Level 2
10. MES devices
 10.1 MES - MESFET model
 10.2 MESA - MESFET model (MacSpice3f4)
11. MOS devices
 11.1 MOS1 - Level 1 MOS model
 11.2 MOS2 - Level 2 MOS model
 11.3 MOS3 - Level 3 MOS model
 11.4 MOS6 - Level 6 MOS model
 11.5 MOS9 - Level 9 MOS model
 11.6 BSIM1 - BSIM model level 1
 11.7 BSIM2 - BSIM model level 2
 11.8 BSIM3 - BSIM model level 3 vers. 0
 11.9 BSIM3 - BSIM model level 3 vers. 1
 11.10 BSIM3 - BSIM model level 3 vers. 2
 11.11 BSIM3 - BSIM model level 3 vers. 3
 11.12 BSIM4 - BSIM model level 4
 11.13 HiSIM2 - Hiroshima-University STARC IGFET Model
 11.14 HiSIM_HV - Hiroshima-University STARC IGFET High Voltage Model
 11.15 VDMOS - A simple PowerMOS transistor model derived from MOS1
12. SOI devices
 12.1 BSIM3SOI_FD - SOI model (fully depleted devices)
 12.2 BSIM3SOI_DD - SOI Model (dynamic depletion model)
 12.3 BSIM3SOI_PD - SOI model (partially depleted devices)
 12.4 BSIMSOI - SOI model (partially/full depleted devices)
 12.5 SOI3 - STAG SOI3 Model
13. Verilog-A models
 13.1 EKV MOS model
 13.2 PSP MOS model 102
 13.3 PSP MOS model 103
 13.4 HICUM0 Bipolar Model
 13.5 Mextram Bipolar Model
14. XSPICE code models
15. Digital Building Blocks (U instances)

                             ------------------

1. Introduction

This file contains the status of devices available in ngspice. This file
will be updated every time the device specific code is altered or changed to reflect the current status of this important part of the simulator


2. Linear Devices

 2.1 CAP - Linear capacitor

     Ver:    N/A
     Class:  C
     Level:  1 (and only)
     Dir:    devices/cap
     Status:

     Enhancements over the original model:
      - Parallel Multiplier
      - Temperature difference from circuit temperature
      - Preliminary technology scaling support
      - Model capacitance
      - Cj calculation based on relative dielectric constant
        and insulator thickness


 2.2 IND - Linear Inductor

     Ver:    N/A
     Class:  L
     Level:  1 (and only)
     Dir:    devices/ind
     Status:

     Enhancements over the original model:
      - Parallel Multiplier
      - Temperature difference from circuit temperature
      - Preliminary technology scaling support
      - Model inductance
      - Inductance calculation for toroids or solenoids
        on the model line.

 2.3 RES - Linear resistor

     Ver:    N/A
     Class:  R
     Level:  1 (and only)
     Dir:    devices/res
     Status:

     Enhancements over the original model:
      - Parallel Multiplier
      - Different value for ac analysis
      - Temperature difference from circuit temperature
      - Noiseless resistor
      - Flicker noise
      - Preliminary technology scaling support

 2.4 R, L, and C behavioral (non-linear) devices
     Their values are determined by an expression (equation)
	 which may contain a combination of voltage and current
	 sources embedded in a mathematical function.


3. Distributed elements

 3.1 CPL - Simple Coupled Multiconductor Lines (Kspice)

     Ver:    N/A
     Class:  P
     Level:  1 (and only)
     Dir:    devices/cpl
     Status:

     This model comes from swec and kspice. It is not documented, if
     you have kspice docs, can you write a short description
     of its use ?

     - Does not implement parallel code switches
     - Probably a lot of memory leaks

     Enhancements over the original model:

     - Better integrated into ngspice adding CPLask, CPLmAsk and
       CPLunsetup functions

 3.2 LTRA - Lossy Transmission line

     Ver:    N/A
     Class:  O
     Level:  1 (and only)
     Dir:    devices/ltra
     Status:

     - Original spice model.
     - Does not implement parallel code switches.

 3.3 TRA  - Transmission line

     Ver:    N/A
     Class:  T
     Level:  1 (and only)
     Dir:    devices/tra
     Status:

    - Original spice model.
    - Does not implement parallel code switches.

 3.4 TXL - Simple Lossy Transmission Line (Kspice)

     Ver:    N/A
     Class:  Y
     Level:  1 (and only)
     Dir:    devices/txl
     Status:

     This model comes from kspice. It is not documented, if
     you have kspice docs, can you write a short description
     of its use ?

     There is some code left out from compilation:
     TXLaccept and TXLfindBr. Any ideas ?

     - Does not implement parallel code switches


 3.5 URC - Uniform distributed RC line

     Ver:    N/A
     Class:  U
     Level:  1 (and only)
     Dir:    devices/urc
     Status:

     - Original spice model.
     - Does not implement parallel code switches.


4. Voltage and current sources

 4.1 ASRC - Arbitrary Source

     Ver:    N/A
     Class:  B
     Level:  1 (and only)
     Dir:    devices/asrc
     Status:

 4.2 CCCS - Current Controlled Current Source

      Ver:    N/A
      Class:  F
      Level:  1 (and only)
      Dir:    devices/cccs
      Status:

      - Original spice model.

 4.3 CCVS - Current Controlled Voltage Source

     Ver:    N/A
     Class:  H
     Level:  1 (and only)
     Dir:    devices/ccvs
     Status:

     - Original spice model.


 4.4 ISRC - Independent Current Source

     Ver:    N/A
     Class:  I
     Level:  1 (and only)
     Dir:    devices/isrc
     Status:

     This is the original spice device improved by Alan Gillespie
     with the following features:

     - Source ramping
     - Check for non-monotonic series in PWL


 4.5 VCCS - Voltage Controlled Current Source

     Ver:    N/A
     Class:  G
     Level:  1 (and only)
     Dir:    devices/vccs
     Status:

     - Original spice model.


4.6 VCVS - Voltage Controlled Voltage Source

    Ver:    N/A
    Class:  E
    Level:  1 (and only)
    Dir:    devices/vcvs
    Status:

    - Original spice model.

 4.7 VSRC - Independent Voltage Source

     Ver:    N/A
     Class:  V
     Level:  1 (and only)
     Dir:    devices/vsrc
     Status:

     The original spice device improved with the following features:

     - Source ramping
     - Check for non-monotonic series in PWL
     - Random values
     - White, 1/f, and random telegraph transient noise sources


5. Switches

 5.1 CSW - Current controlled switch

      Ver:    N/A
      Class:  W
      Level:  1 (and only)
      Dir:    devices/csw
      Status:

      - This model comes from Jon Engelbert.


 5.2 SW - Voltage controlled switch

     Ver:    N/A
     Class:  S
     Level:  1 (and only)
     Dir:    devices/sw
     Status:

     - This model comes from Jon Engelbert.


6. Diodes

 6.1 DIO - Junction Diode

     Ver:    N/A
     Class:  D
     Level:  1 (and only)
     Dir:    devices/dio
     Status:

     Enhancements over the original model:
     - Parallel Multiplier
     - Temperature difference from circuit temperature
     - Forward and reverse knee currents
     - Periphery (sidewall) effects
     - Temperature correction of some parameters
     - Self heating


7. Bipolar devices

 7.1 BJT - Bipolar Junction Transistor

     Ver:    N/A
     Class:  Q
     Level:  1
     Dir:    devices/bjt
     Status:

     Enhancements over the original model:
     - Parallel Multiplier
     - Temperature dependency on rc,rb,re
     - Temperature difference from circuit temperature
     - Different area parameters for collector, base and emitter
     - Support lateral PNP

 7.2 VBIC - Bipolar Junction Transistor

     Ver:    N/A
     Class:  Q
     Level:  4 & 9
     Dir:    devices/vbic
     Status:

     This is the Vertical Bipolar InterCompany model in version 1.2. The author
     of VBIC is Colin McAndrew mcandrew@ieee.org.
     Spice3 Implementation: Dietmar Warning DAnalyse GmbH
     Web Site: http://www.designers-guide.com/VBIC/index.html

     Notes: This is the 4 terminals model, without excess phase and thermal
            network.

 7.3 HICUM 2 - Bipolar Junction Transistor for high frequency

     Ver:    2.4
     Class:  Q
     Level:  8
     Dir:    devices/hicum2

     HICUM: HIgh CUrrent Model is a physics-based geometry-scalable compact
     model for homo- and heterojunction bipolar transistors, developed by
     the HICUM Group at CEDIC, University of Technology Dresden, Germany.
     Web Site: https://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_intro.html


8. FET devices

 8.1 JFET - Junction Field Effect transistor

     Ver:    N/A
     Class:  J
     Level:  1
     Dir:    devices/jfet
     Status:

     This is the original spice JFET model.

     Enhancements over the original model:
     - Alan Gillespie's modified diode model
     - Parallel multiplier
     - Instance temperature as difference for circuit temperature

 8.2 JFET2 - Junction Field Effect Transistor  (PS model)

     Ver:    N/A
     Class:  J
     Level:  2
     Dir:    devices/jfet2
     Status:

     This is the Parker Skellern model for MESFETs.

     Web Site: http://www.elec.mq.edu.au/cnerf/psmodel.htm

     Enhancements over the original model:
     - Parallel multiplier
     - Instance temperature as difference for circuit temperature


9. HFET Devices

   Added code from macspice3f4 HFET1&2 and MESA model
   Original note:
     Added device calls for Mesfet models and HFET models
     provided by Trond Ytterdal as of Nov 98

 9.1 HFET1 - Heterostructure Field Effect Transistor Level 1

     Ver:    N/A
     Class:  Z
     Level:  5
     Dir:    devices/hfet1
     Status:

     This is the Heterostructure Field Effect Transistor model from:
     K. Lee, M. Shur, T. A. Fjeldly and T. Ytterdal
     "Semiconductor Device Modeling in VLSI",
     1993, Prentice Hall, New Jersey

     Enhancements over the original model:
     - Parallel multiplier
     - Instance temperature as difference for circuit temperature
     - Added pole-zero analysis


 9.2 HFET2 - Heterostructure Field Effect Transistor Level 2

     Ver:    N/A
     Class:  Z
     Level:  6
     Dir:    devices/hfet2
     Status:

     Simplified version of hfet1

     Enhancements over the original model:
     - Parallel multiplier
     - Instance temperature as difference for circuit temperature
     - Added pole-zero analysis


10. MES devices

 10.1 MES - MESFET model

      Ver:    N/A
      Class:  Z
      Level:  1
      Dir:    devices/mes
      Status:

      This is the original spice3 MESFET model (Statz).

      Enhancements over the original model:
      - Parallel multiplier
      - Alan Gillespie junction diodes implementation


  Added code from macspice3f4 HFET1&2 and MESA model
  Original note:
  Added device calls for Mesfet models and HFET models
  provided by Trond Ytterdal as of Nov 98

10.2 MESA - MESFET model (MacSpice3f4)

     Ver:    N/A
     Class:  Z
     Level:  2,3,4
     Dir:    devices/mesa
     Status:

     This is a multilevel model. It contains code for mesa levels
     2,3 and 4

     Enhancements over the original model:
     - Parallel multiplier
     - Instance temperature as difference from circuit temperature
     - Added pole-zero analysis



11. MOS devices

 11.1 MOS1 - Level 1 MOS model

      Ver:    N/A
      Class:  M
      Level:  1
      Dir:    devices/mos1
      Status:

      This is the so-called Schichman-Hodges model.

      Enhancements over the original model:
      - Parallel multiplier
      - Temperature difference from circuit temperature

 11.2 MOS2 - Level 2 MOS model

      Ver:    N/A
      Class:  M
      Level:  2
      Dir:    devices/mos2
      Status:

      This is the so-called  Grove-Frohman model.

      Enhancements over the original model:
      - Parallel multiplier
      - Temperature difference from circuit temperature


 11.3 MOS3 - Level 3 MOS model

      Ver:    N/A
      Class:  M
      Level:  3
      Dir:    devices/mos3
      Status:

      Enhancements over the original model:
      - Parallel multiplier
      - Temperature difference from circuit temperature


 11.4 MOS6 - Level 6 MOS model

      Ver:    N/A
      Class:  M
      Level:  6
      Dir:    devices/mos6
      Status:

      Enhancements over the original model:
      - Parallel multiplier
      - Temperature difference from circuit temperature


 11.5 MOS9 - Level 9 MOS model

      Ver:    N/A
      Class:  M
      Level:  9
      Dir:    devices/mos9
      Status:

      This is a slightly modified Level 3 MOSFET model.
      (Whatever the implementer have had in mind.)
      Not to confuse with Philips level 9.
      Enhancements over the original model:
      - Temperature difference from circuit temperature


 11.6 BSIM1 - BSIM model level 1

      Ver:    N/A
      Class:  M
      Level:  4
      Dir:    devices/bsim1
      Status:

      Enhancements over the original model:
      - Parallel multiplier
      - Noise analysis

      BUGS:
      Distortion analysis probably does not
      work with "parallel" devices. Equations
      are too intricate to deal with. Any one
      has ideas on the subject ?


 11.7 BSIM2 - BSIM model level 2

      Ver:    N/A
      Class:  M
      Level:  5
      Dir:    devices/bsim2
      Status:

      Enhancements over the original model:
      - Parallel multiplier
      - Noise analysis


 11.8 BSIM3v0 - BSIM model level 3

      Ver:    3.0
      Class:  M
      Level:  8 & 49, version = 3.0
      Dir:    devices/bsim3v0
      Status: TO BE TESTED AND IMPROVED


 11.9 BSIM3v1 - BSIM model level 3

      Ver:    3.1
      Class:  M
      Level:  8 & 49, version = 3.1
      Dir:    devices/bsim3v1
      Status: TO BE TESTED AND IMPROVED

       This is the BSIM3v3.1 model modified by Serban Popescu.
       This is level 49 model. It is an implementation that supports
       "HDIF" and "M" parameters.


 11.10 BSIM3 - BSIM model level 3

       Ver:    3.2.4
       Class:  M
       Level:  8 & 49, version = 3.2.2, 3.2.3, 3.2.4
       Dir:    devices/bsim3v32 (level 3.2.4)
       Status: o.k.

       This is another BSIM3 model from Berkeley Device Group.
       You can find some test netlists with results for this model
       on its web site.

       Web site: http://www-device.eecs.berkeley.edu/~bsim3

       Enhancements over the original model:
        - Parallel Multiplier
        - delvto, mulu0 instance parameter
        - ACM Area Calculation Method
        - Multirevision code (supports all 3v3.2 minor revisions)
        - NodesetFix


 11.11 BSIM3 - BSIM model level 3

       Ver:    3.3.0
       Class:  M
       Level:  8 & 49, version = 3.3.0
       Dir:    devices/bsim3 (level 3.3.0)
       Status: o.k.

       This is the actual BSIM3 model from Berkeley Device Group.
       You can find some test netlists with results for this model
       on its web site.

       Web site: http://www-device.eecs.berkeley.edu/~bsim3

       Enhancements over the original model:
        - Parallel Multiplier
        - ACM Area Calculation Method
        - Multirevision code (supports all 3v3.2 minor revisions)
        - NodesetFix
        - Support for Multi-core processors using OpenMP


 11.12 BSIM4 - BSIM model level 4

       Ver:    4.2.0 - 4.6.5
       Class:  M
       Level:  14 & 54, version = 4.5, 4.6, 4.7, 4.8
       Dir:    devices/bsim4 (level 4.8.0)
       Status: o.k.

       This is the actual BSIM4 model from Berkeley Device Group.
       Test are available on its web site.

       Web site: http://www-device.eecs.berkeley.edu/~bsim3/bsim4.html

       Enhancements over the original model:
        - Parallel Multiplier
        - NodesetFix
        - Support for Multi-core processors using OpenMP


 11.13 HiSIM2 - Hiroshima-university STARC IGFET Model

       Ver:    2.8.0
       Class:  M
       Level:  68
       Dir:    devices/hisim2
       Status: TO BE TESTED.

       This is the HiSIM2 model available from Hiroshima University
       (Ultra-Small Device Engineering Laboratory)

       Web site: http://home.hiroshima-u.ac.jp/usdl/HiSIM.html

       Enhancements over the original model:
        - Support for Multi-core processors using OpenMP


 11.14 HiSIM_HV - Hiroshima-University STARC IGFET High Voltage Model

       Ver:    1.2.4 and 2.2
       Class:  M
       Level:  73
       Dir:    devices/hisimhv
       Status: TO BE TESTED.

       This is the HiSIM_HV model version 1 and 2 available from
       Hiroshima University (Ultra-Small Device Engineering Laboratory)

       Web site: http://home.hiroshima-u.ac.jp/usdl/HiSIM.html


 11.15 VDMOS - Simple PowerMOS model

       Ver:    1
       Class:  M
       Level:  -
       Dir:    devices/vdmos
       Status: o.k.

       This is a simplified Power MOS model, derived from MOS1 and
       diode, similar to LTSPICE and SuperSpice VDMOS

       Enhancements over the original model:
        - Self heating with temp nodes junction and case
        - Weak inversion
        - Quasi-saturation


12. SOI devices

 12.1 BSIM3SOI_FD - SOI model (fully depleted devices)

      Ver:    2.1
      Class:  M
      Level:  55
      Dir:    devices/bsim3soi_fd
      Status: TO BE TESTED.

      FD model has been integrated.
      There is a bsim3soifd directory under the test
      hierarchy. Test circuits come from the bsim3soi

      Web site at: http://www-device.eecs.berkeley.edu/~bsimsoi



 12.2 BSIM3SOI_DD - SOI Model (dynamic depletion model)

      Ver:    2.1
      Class:  M
      Level:  56
      Dir:    devices/bsim3soi_dd
      Status: TO BE TESTED.

      There is a bsim3soidd directory under the
      test hierarchy. Test circuits come from bsim3soi

      Web site at: http://www-device.eecs.berkeley.edu/~bsimsoi



 12.3 BSIM3SOI_PD - SOI model (partially depleted devices)

      Ver:    2.2.1
      Class:  M
      Level:  57
      Dir:    devices/bsim3soi_pd
      Status: TO BE TESTED.

      PD model has been integrated. There is a bsim3soipd directory
      under the test hierarchy. Test circuits come from the bsim3soi

      Web site at: http://www-device.eecs.berkeley.edu/~bsimsoi



 12.4 BSIMSOI - Berkeley SOI model (partially/full depleted devices)

      Ver:    4.3.1
      Class:  M
      Level:  10 & 58
      Dir:    devices/bsim3soi
      Status: o.k.

      This is the actual version from Berkeley. This version is
      backward compatible with its previous versions BSIMSOI3.x.
      Usable for partially/full depleted devices.

      Web site at: https://bsim.berkeley.edu/models/bsimsoi/

      Enhancements over the original model:
      - Parallel Multiplier
      - Support for Multi-core processors using OpenMP



 12.5 SOI3 - STAG SOI3 Model

      Ver:    2.6
      Class:  M
      Level:  60
      Dir:    devices/soi3
      Status: OBSOLETE



13. Verilog-A models

      Configuring ngspice with ADMS (see Readme.adms) following
      devices are available:

 13.1 EKV MOS Model

      Ver:    2.6
      Level:  44
      Dir:    devices/adms/ekv
      Status: TO BE TESTED

      EKV version based on a contribution of Ivan Riis Nielsen 11/2006

      Web site at: https://www.epfl.ch/labs/iclab/ekv/model/
      (The model from https://github.com/ekv26/model is not compatible
      to the current ngspice adms implementation)


 13.2 PSP MOS Model 102

      Ver:    102.1
      Level:  45
      Dir:    devices/adms/psp102
      Status: TO BE TESTED

      Philips SimKit 2.5.

 13.3 PSP MOS Model 103

      Ver:    103.1
      Level:  69
      Dir:    devices/adms/psp103
      Status: TO BE TESTED

      Philips SimKit 2.5.

 13.4 HICUM0 Bipolar Model

      Ver:    Level_0 Version_1.12
      Level:  7
      Dir:    devices/adms/hicum0
      Status: TO BE TESTED

      A simplified version of HICUM Level2 model for BJT
      Web site at: http://www.iee.et.tu-dresden.de/iee/eb/hic_new


 13.5 Mextram Bipolar Model

      Ver:    504.6.1
      Level:  6
      Dir:    devices/adms/mextram
      Status: TO BE TESTED

      Web site at: http://mextram.ewi.tudelft.nl/ and http://mextram.sourceforge.net/

 14. XSpice code models, see ngspice manual chapt. 12
 
 15. Digital Building Blocks (U instances)
 
       U instances are digital primitives which may be used (in proper combination) to
       model digital devices, e.g. from the 74xx or 40xx families. ngspice maps them
       onto XSPICE models, which allows a fast event based simulation.