sprocess_fps

AdvancedCalibration 2011.09

#SiGe 1D
#header 
set DEBUG 1
pdbSet ImplantData DoseControl WaferDose
#endheader

math coord.ucs
#----------------------------------------------------------------------#

mgoals on min.normal.size= 5<nm> accuracy= 0.2<nm> \ 
       normal.growth.ratio= 1.5 
refinebox name= Interface \
           min.normal.size= 1<nm> \
           interface.materials= "Silicon" \
           min= "-0.01 0.2" max= "+0.01 1.0"     
refinebox name= All min= "-1 0" max= "1 1" \
           xrefine= "0.01 0.001 0.01" yrefine= "0.1" add all
           
#----------------------------------------------------------------------#
       
line x   location= -0.01   spacing= 0.01
line x   location= 0.05    spacing= 0.001   tag= sitop
line x   location= 0.4     spacing= 0.001    tag= sibot
line y   location= 0       spacing= 0.5     tag= left
line y   location= 1       spacing= 0.5     tag= right

region   substrate silicon xlo= sitop xhi= sibot ylo= left yhi= right
init     field= phosphorus concentration= 1e15 !DelayFullD

#----------------------------------------------------------------------#
#split @SiGe_C@

deposit  material= {Silicon} type= isotropic rate= {1.0} time= 0.2

#-Setting Carbon profile in newly deposited SiGe layer
profile  name=Carbon  infile = Ca1_C.txt

#deposit  material= {Oxide} type= isotropic   rate= {1.0}  time= 0.02

if { $DEBUG } {
 SetPlxList { Carbon }
 WritePlx n@node@_as_grown.plx  y= 0.5
}
#----------------------------------------------------------------------#
#split @RTA@

pdbSet silicon Dopant DiffModel ChargedPair
#pdbSet silicon Carbon DiffModel NeutralReact
pdbSet silicon Carbon ActiveModel NeutralCluster


diffuse time=10 temp=920

profile  name=Cannealed  infile = Ca2_C.txt

if { $DEBUG } {
 SetPlxList { Carbon Ctotal Cannealed C2 C2I C3I2 C4I3}
 WritePlx n@node@_SiGe_RTA.plx  y=0.5
}

struct tdr= n@node@