How to calculate L2,3-edge at silicon?

[YasuiKentaro]

I am using μSTEM (CPU version) to simulate silicon in the 011 incidence direction, and when performing EELS calculations, only the K,M-edge is displayed.

when we performed the M-edge simulation, the EELS map was localized to the atoms, so we assume that the L2,3-edge calculation is being performed.
      
In this case, how should we calculate the L2,3-edge?

 Ionization choices

Index  Atom| Z  | Orbital | Shell | Window (eV)| Included(y/n)
-----------------------------------------------------------
 < 1>  Si  | 14 |  1s     | K     |   0.0      | n
 < 2>  Si  | 14 |  3s     | M1    |   0.0      | n
 < 0> continue
 > 2
 Enter EELS energy window above threshold in eV (between 1 and 100 ev):

 > 30